Negative resist based on phenol protection.
                    
                        
                            نویسندگان
                            
                            
                        
                        
                    
                    
                    چکیده
منابع مشابه
Polystyrene negative resist for high-resolution electron beam lithography
We studied the exposure behavior of low molecular weight polystyrene as a negative tone electron beam lithography (EBL) resist, with the goal of finding the ultimate achievable resolution. It demonstrated fairly well-defined patterning of a 20-nm period line array and a 15-nm period dot array, which are the densest patterns ever achieved using organic EBL resists. Such dense patterns can be ach...
متن کاملmortality forecasting based on lee-carter model
over the past decades a number of approaches have been applied for forecasting mortality. in 1992, a new method for long-run forecast of the level and age pattern of mortality was published by lee and carter. this method was welcomed by many authors so it was extended through a wider class of generalized, parametric and nonlinear model. this model represents one of the most influential recent d...
15 صفحه اولNano-artifact metrics based on random collapse of resist
Artifact metrics is an information security technology that uses the intrinsic characteristics of a physical object for authentication and clone resistance. Here, we demonstrate nano-artifact metrics based on silicon nanostructures formed via an array of resist pillars that randomly collapse when exposed to electron-beam lithography. The proposed technique uses conventional and scalable lithogr...
متن کاملModified Impedance-Based OOS Protection Based on On-Line Thévenin Equivalent Estimation
In this paper, a novel approach based on the Thévenin tracing is presented to modified conventional impedance-based out-of-step (OOS) protection. In conventional approach, the OOS detection is done by measuring positive sequence impedance. However, the measured impedance may be change due to different factors such as capacitor bank switching and reactive power compensators that it can cause the...
متن کاملNegative resist behavior of neutral sodium atoms deposited on self-assembled monolayers
Negative resist behavior of neutral sodium atoms deposited on self-assembled monolayers" (2007). Other Nanotechnology Publications. Paper 24. The authors report their initial studies of the negative resist behavior of neutral sodium atoms deposited on alkanethiol molecules during neutral atom lithographic processing. Their results show that neutral sodium atoms incident upon octadecanethiol, th...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Journal of Photopolymer Science and Technology
سال: 1991
ISSN: 0914-9244,1349-6336
DOI: 10.2494/photopolymer.4.403